Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• , Luxembourg Thermo Fisher Scientific, Hillsboro, OR, 97124, USA 10.3762/bjnano.13.86 Abstract Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining, and

• probe tomography (APT) [5], and ion beam analysis used for life sciences applications [6][7]), surface patterning [8], nanolithography [9], nanomachining [10][11], and nanoprinting at room [12] and cryogenic temperatures [13]. The development of nanotechnology relies on lower ion beam energies and

• ; molecular dynamics; silicon; simulations; water; Introduction Focused ion beams (FIB) play an increasingly important role in materials research areas such as nanoanalysis (e.g., secondary ion mass spectrometry (SIMS) [1][2][3] and sample preparation for transmission electron microscopy (TEM) [4], atom

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• atom probe tomography, providing sub-nanometer spatial information of the chemical composition, scanning tunneling electron microscope (STEM) imaging and spectroscopy at low beam energy [65], enabling the characterization of individual defects in h-BN, and atomic electron tomography. However, all these

Quantitative determination of the interaction potential between two surfaces using frequency-modulated atomic force microscopy

• Nicholas Chan,
• Carrie Lin,
• Tevis Jacobs,
• Robert W. Carpick and
• Philip Egberts

Beilstein J. Nanotechnol. 2020, 11, 729–739, doi:10.3762/bjnano.11.60

• generated using the 6-12 LJ pair potential form and experimental tip apex geometry, which was extracted from two-dimensional transmission electron microscopy (TEM) images. In prior works, the shapes of AFM probes have been determined using field ion microscopy (FIM) [39], atom probe tomography (APT) [40

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• , which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current

• of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes. Keywords: atom probe tomography; doping; photoluminescence; silicon nanocrystals; transient transmission; Introduction The conductivity type and free carrier

• incorporation efficiency of B in Si-rich oxides is approximately one order of magnitude lower than that of P. Since SIMS cannot reveal the distribution of the dopants in the heterogeneous sample system of Si NCs and SiO2 after annealing, atom probe tomography (APT) is used. APT was demonstrated to be a powerful

Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

• Domagoj Belić,
• Mostafa M. Shawrav,
• Emmerich Bertagnolli and
• Heinz D. Wanzenboeck

Beilstein J. Nanotechnol. 2017, 8, 2530–2543, doi:10.3762/bjnano.8.253

• [65]. More accurate compositional quantification could probably be achieved by performing atom probe tomography or thickness-corrected STEM electron energy loss spectroscopy (EELS). Planar Au nanostructures The main goal here was to elucidate the effects of each experimental parameter on the

Atomic structure of Mg-based metallic glass investigated with neutron diffraction, reverse Monte Carlo modeling and electron microscopy

• Rafał Babilas,
• Dariusz Łukowiec and
• Laszlo Temleitner

Beilstein J. Nanotechnol. 2017, 8, 1174–1182, doi:10.3762/bjnano.8.119

• transmission electron microscopy and atom probe tomography. Despite this, detailed information on the atomic configuration of the multicomponent Mg-based glassy alloys is not often reported. This work aims at describing the structure of Mg65Cu20Y10Ni5 glass before and after annealing by experimental and

Self-assembly of silicon nanowires studied by advanced transmission electron microscopy

• Marta Agati,
• Guillaume Amiard,
• Vincent Le Borgne,
• Paola Castrucci,
• Richard Dolbec,
• Maurizio De Crescenzi,
• My Alì El Khakani and
• Simona Boninelli

Beilstein J. Nanotechnol. 2017, 8, 440–445, doi:10.3762/bjnano.8.47

• correctors [3]. In order to access a more realistic three-dimensional vision of nanomaterial components, 3D characterization techniques are highly demanded. For this purpose, atom probe tomography (APT) [4] and X-ray tomography [5] have been used. Nevertheless, while X-ray tomography has a rather limited

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• ) plan-view images of the as-implanted Se sample. The implantation induces the formation of three types of defects, randomly distributed on or in the germanium layer: (i) large clusters of Ge oxide with an average lateral size of ≈400 nm (composition analyzed by atom probe tomography, not reported here

Si/Ge intermixing during Ge Stranski–Krastanov growth

• Alain Portavoce,
• Khalid Hoummada,
• Antoine Ronda,
• Dominique Mangelinck and
• Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

• concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %. Keywords: atom probe tomography; germanium islands

• ][2][3][4][5][6][35], the composition and the thickness of the wetting layer (WL) are still under discussion due to Si/Ge intermixing during growth [10][11][25]. In the present work, pulsed laser atom probe tomography (APT) has been used to quantitatively study (at the atomic scale and in the 3D space

• at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing), the composition of the Ge islands is not precisely known. In the present work, atom probe

On the structure of grain/interphase boundaries and interfaces

• K. Anantha Padmanabhan and
• Herbert Gleiter

Beilstein J. Nanotechnol. 2014, 5, 1603–1615, doi:10.3762/bjnano.5.172

• coworkers [48][49][50] have examined the relevance of the CSL concept in understanding the two properties of segregation and corrosion by using TEM, atom probe tomography (APT) and a “pseudo” 3D-EBSD approach. The major conclusions are as follows. (a) Segregation for low-angle grain boundaries scales with